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| DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor FEATURES * Low noise * Interchangeability of drain and source connections * High gain. handbook, halfpage PMBF4416; PMBF4416A 3 d s DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 PIN 1 2 3 drain gate QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source voltage PMBF4416 PMBF4416A IDSS Ptot VGS(off) drain-source current total power dissipation gate-source cut-off voltage PMBF4416 PMBF4416A Yfs common-source transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz VDS = 15 V; VGS = 0 - - 5 30 35 15 250 V V mA mW CONDITIONS MIN. MAX. UNIT DESCRIPTION source Fig.1 Simplified outline and symbol. g 1 Top view 2 MAM385 Marking codes: PMBF4416: P6A. PMBF4416A: M16. up to Tamb = 25 C - VDS = 15 V; ID = 1 nA - -2.5 4.5 -6 -6 7.5 V V mS April 1995 2 Philips Semiconductors Product specification N-channel field-effect transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS PARAMETER drain-source voltage PMBF4416 PMBF4416A VGSO gate-source voltage PMBF4416 PMBF4416A VGDO gate-drain voltage PMBF4416 PMBF4416A IG Ptot Tstg Tj DC forward gate current total power dissipation storage temperature junction temperature CONDITIONS PMBF4416; PMBF4416A MIN. - - - - - - - MAX. 30 35 -30 -35 -30 -35 10 250 +150 150 V V V V V V UNIT mA mW C C up to Tamb = 25 C (note 1) - -65 - THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Mounted on an FR4 printed-circuit board. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)GSS PMBF4416 PMBF4416A IGSS IDSS VGSS VGS(off) reverse gate leakage current drain current gate-source forward voltage gate-source cut-off voltage PMBF4416 PMBF4416A Yfs Yos common source transfer admittance common source output admittance PMBF4416 PMBF4416A VDS = 15 V; VGS = 0 VDS = 15 V; VGS = 0 - - 50 50 S S VDS = 0; VGS = -15 V VDS = 15 V; VGS = 0 VDS = 0; IG = 1 mA VDS = 15 V; ID = 1 nA - -2.5 4.5 -6 -6 7.5 V V mS PARAMETER gate-source breakdown voltage CONDITIONS VDS = 0; IG = -1 A -30 -35 - 5 - - - 1 15 1 V V nA mA V MIN. MAX. UNIT PARAMETER from junction to ambient (note 1) THERMAL RESISTANCE 500 K/W April 1995 3 Philips Semiconductors Product specification N-channel field-effect transistor DYNAMIC CHARACTERISTICS Tj = 25 C; VDS = 15 V; VGS = 0. SYMBOL Cis Cos Crs gis gfs grs gos Vn PARAMETER input capacitance output capacitance feedback capacitance common source input conductance common source transfer conductance common source feedback conductance common source output conductance equivalent input noise voltage CONDITIONS f = 1 MHz f = 1 MHz f = 1 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz f = 100 Hz PMBF4416; PMBF4416A MIN. - - - - - - 4 - - - - - - - - - - TYP. 4 2 MAX. UNIT pF pF pF S mS mS mS S S S S nV/Hz 0.8 100 1 - - - - 75 100 - 5.2 5 -8 -100 - - 5 handbook,25 halfpage MRC168 MRC169 I DSS (mA) handbook, 10 halfpage Y fs (mS) 8 20 15 6 10 4 5 2 0 0 2 4 6 -VGS(off) (V) 0 0 2 4 6 -VGS(off) (V) VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.2 Drain current as a function of gate-source cut-off voltage; typical values. Fig.3 Common source transfer admittance as a function of gate-source cut-off voltage; typical values. April 1995 4 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A handbook, halfpage 80 MRC167 Gos ( S) 60 handbook, halfpage 12 MRC163 ID (mA) 8 VGS = 0 V 40 -0.5 V 4 20 -1V 0 0 1 2 3 4 5 -VGS(off) (V) VDS = 15 V; Tj = 25 C. Tj = 25 C. 6 0 0 4 8 12 VDS (V) 16 Fig.4 Common source output conductance as a function of gate-source cut-off voltage; typical values. Fig.5 Typical output characteristics. handbook, 12 halfpage MRC164 1 handbook, halfpage C rs (pF) 0.8 MRC158 ID (mA) 8 0.6 0.4 4 0.2 0 -5 -4 -3 -2 -1 0 V (V) GS 0 -10 -8 -6 -4 -2 0 VGS (V) VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C. Fig.6 Typical input characteristics. Fig.7 Typical feedback capacitance. April 1995 5 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A MRC157 3.5 handbook, halfpage Cis (pF) 3 2.5 4 handbook,10 halfpage MRC165 -I G (pA) 10 3 2 I D = 1 mA 10 2 10 1.5 1 0.5 0 -10 10 1 0.1 mA I GSS -1 -8 -6 -4 -2 0 VGS (V) 10 -2 0 4 8 12 16 20 VDG (V) VDS = 15 V; Tj = 25 C. Fig.8 Typical input capacitance. Fig.9 Gate current as a function of drain-gate voltage, typical values. 300 handbook, halfpage P tot (mW) MRC166 100 handbook, halfpage gis , b is (mS) 10 b is MRC160 200 1 g is 100 0.1 00 50 100 Tamb ( oC) 150 0.01 10 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.10 Power derating curve. Fig.11 Common source input conductance; typical values. April 1995 6 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A handbook, halfpage 100 MRC159 100 handbook, halfpage -g rs , -brs (mS) 10 MRC162 g fs , -bfs (mS) 10 -brs g fs 1 1 -b fs 0.1 -g rs 0.01 0.1 10 100 f (MHz) 1000 0.001 10 100 f (MHz) 1000 VDS = 15 V; VGS = 0; Tamb = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.12 Common source transfer conductance; typical values. Fig.13 Common source feedback conductance; typical values. SPICE parameters for PMBF4416 September 1992; version 1.0. handbook, halfpage 100 MRC161 1 2 3 4 5 VTO = -3.553 BETA = 792.6 RD = 7.671 RS = 7.671 IS = 333.4 CGSO = 2.920 CGDO = 2.261 PB = 1.090 FC = 500.0 V A/V2 aA pF pF V m gos , bos (mS) 10 LAMBDA = 18.46 m/V b os 1 6 7 8 9 g os 0.1 10 (note 1) Note 0.01 10 100 f (MHz) 1000 1. Parameter not extracted; default value. VDS = 15 V; VGS = 0; Tamb = 25 C. Fig.14 Common source output conductance; typical values. April 1995 7 Philips Semiconductors Product specification N-channel field-effect transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMBF4416; PMBF4416A SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 April 1995 8 Philips Semiconductors Product specification N-channel field-effect transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values PMBF4416; PMBF4416A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 9 |
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